| PART |
Description |
Maker |
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| UPA862TD-T3 UPA862TD-A UPA862TD-T3-A |
NPN Silicon RF Twin Transistor with 2 Different Elements
|
Renesas Electronics Corporation
|
| UPA826TC01 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC
|
| UPA833TF99 UPA833TF-T1 UPA833TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC[NEC]
|
| HTT1115S |
SILICON NPN EPITAXIAL TWIN TRANSISTOR
|
Hitachi Semiconductor
|
| BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
Infineon
|
| UPA821 UPA821TC UPA821TC-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
|
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
